One-Step Preparation of Si-Doped Ultra-Long β-Ga2O3 Nanowires by Low-Pressure Chemical Vapor Deposition

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

UNLABELLED Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to ...

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Bilayer Graphene Growth by Low Pressure Chemical Vapor Deposition

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films...